TISP61089DR-S

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Specification
Package | SOIC-8 |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Height | 1.55 mm |
Holding Current | 150mA |
Off-state voltage (Vdrm) | 100 V |
Maximum Breakover Current IBO | - 57 V |
Length | 5 mm |
Width | 4 mm |
Transistor type | Dual Forward Conducting P-Gate Thyristors |
Termination type | SMD/SMT |
Gate trigger current | - 5 uA |
Operating Temperature Range | - 40 C~+ 85 C |
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