TISP6NTP2CDR-S

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Specification
Package | SO-8 |
Operating Temperature Range | - 40 C~+ 85 C |
Termination type | SMD/SMT |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Height | 1.55 mm |
Transistor type | Quad Forward Conducting P-Gate Thyristors |
Maximum Breakover Current IBO | - 112 V |
Off-state voltage (Vdrm) | - 170 V |
Width | 4 mm |
Length | 5 mm |
Gate trigger current | 5 mA |
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