HDS06520AG11
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HDM120040EG11
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碳化硅场效应晶体管SIC MOSFET 漏源击穿电压 BVDS(V)1200/漏源导通电阻 RDS(on)(mΩ)40 TO-247-3L
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HDS12006AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 1200/正向导通电流 IF(A) 6 TO-220
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HDS06508AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 650/正向导通电流 IF(A) 8 TO-220
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HDS12020AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 1200/正向导通电流 IF(A) 20 TO-220
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HDS06506AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 650/正向导通电流 IF(A) 6 TO-220
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HDS12010AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 1200/正向导通电流 IF(A)10 TO-220
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HDS06510AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 650/正向导通电流 IF(A) 10 TO-220
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HDM120030EG11
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碳化硅场效应晶体管SIC MOSFET 漏源击穿电压 BVDS(V)1200/漏源导通电阻 RDS(on)(mΩ)80 TO-247-3L
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HDM17045FG11
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碳化硅场效应晶体管SIC MOSFET 漏源击穿电压 BVDS(V)1200/漏源导通电阻 RDS(on)(mΩ)80 TO-247-3L
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HDS12040AG11
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碳化硅肖特基二极管SIC Schottky Diode 直流反向电压 VR(V) 1200/正向导通电流 IF(A) 40 TO-220
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