IXDN75N120
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Specification
Pd-Power Dissipation | 660W |
Collector Current Ic | 150 A |
Gate Threshold Voltage-VGE(th) | 20 V |
Package | SOT-227B-4 |
工厂最小包装 | 10 |
寿命周期 | 量产 |
ROHS | no |
Collector-emitter saturation voltage | 1200V |
Types | NPT |
Max, gate / emitter voltage | 20 V |
Height | 9.6 mm |
Collector-emitter voltage | 1200 V |
Operating Temperature Range | - 40 C~+ 150 C |
Length | 38.2 mm |
Width | 25.07 mm |
Termination type | SMD/SMT |
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IXDN75N120 Releted Information
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