IXFH12N100P

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Specification
VDS | 1 kV |
Continuous drain current | 12 A |
Pd-Power Dissipation | 463 W |
Termination type | Through Hole |
Rds On | 1.05 Ohms |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | Polar HiPerFET Power MOSFET |
VGS | 10 V |
Operating Temperature Range | - 55 C~+ 150 C |
Circuit Branch Number | 1 Channel |
Package | TO-247-3 |
Qg | 80 nC |
Height | 21.46 mm |
Length | 16.26 mm |
Width | 5.3 mm |
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IXFH12N100P Releted Information
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