IXFK32N100P

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Specification
Pd-Power Dissipation | 960 W |
VDS | 1 kV |
Rds On | 320 mOhms |
Continuous drain current | 32 A |
Termination type | Through Hole |
工厂最小包装 | 25 |
寿命周期 | 量产 |
ROHS | yes |
Package | TO-264AA(IXFK) |
Transistor polarity | Polar Power MOSFET HiPerFET |
Operating Temperature Range | - 55 C~+ 150 C |
Circuit Branch Number | 1 Channel |
Qg | 225 nC |
Height | 26.16 mm |
Length | 19.96 mm |
Width | 5.13 mm |
VGS | 30 V |
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