IXFN180N25T

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Specification
Rds On | 12.9 mOhms |
Pd-Power Dissipation | 900 W |
Termination type | Chassis Mount |
VDS | 250 V |
Continuous drain current | 168 A |
工厂最小包装 | 10 |
寿命周期 | 量产 |
ROHS | yes |
Circuit Branch Number | 1 Channel |
Length | 38.23 mm |
VGS | 10 V |
Qg | 364 nC |
Height | 12.22 mm |
Transistor polarity | GigaMOS Power MOSFET |
Operating Temperature Range | - 55 C~+ 150 C |
Package | SOT-227-4 |
Width | 25.42 mm |
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