IXTB62N50L

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Specification
Rds On | 100 mOhms |
Termination type | Through Hole |
VDS | 500 V |
Continuous drain current | 62 A |
Pd-Power Dissipation | 800 W |
工厂最小包装 | 25 |
寿命周期 | 量产 |
ROHS | no |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
Circuit Branch Number | 1 Channel |
Length | 20.29 mm |
Transistor polarity | MOSFET |
Width | 5.31 mm |
Height | 26.59 mm |
Package | TO-247-3 |
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