IXTJ4N150

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Specification
Pd-Power Dissipation | 110 W |
VDS | 1.5 kV |
Continuous drain current | 2.5 A |
Termination type | Through Hole |
Rds On | 6 Ohms |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | yes |
VGS | 30 V |
Operating Temperature Range | - 55 C~+ 150 C |
Package | TO-247-3 |
Qg | 44.5 nC |
Height | 21.34 mm |
Length | 6.13 mm |
Width | 5.21 mm |
Transistor polarity | High Voltage Power MOSFET |
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