IXTQ50N25T
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Specification
Package | TO-3P-3,SC-65-3 |
Continuous drain current | 50 A |
Pd-Power Dissipation | 400 W |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | Trench Gate Power MOSFET |
VGS | 30 V |
Qg | 78 nC |
Height | 20.3 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Rds On | 60 mOhms |
Width | 4.9 mm |
VDS | 250 V |
Length | 15.8 mm |
Circuit Branch Number | 1 Channel |
Termination type | Through Hole |
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