IXTQ52N30P
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Specification
Rds On | 66 mOhms |
Pd-Power Dissipation | 400 W |
Termination type | Through Hole |
VDS | 300 V |
Continuous drain current | 52 A |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | yes |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 20 V |
Height | 20.3 mm |
Transistor polarity | MOSFET |
Package | TO-3P-3 |
Length | 15.8 mm |
Width | 4.9 mm |
Circuit Branch Number | 1 Channel |
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