BAS40E6327HTSA1

In stock
- BAS40E6327HTSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qualification level | AEC-Q101 |
Package | SOT-23 |
Operating Temperature Range | -55℃~+150℃ |
Vr-reverse voltage | 40V |
Forward Surge Current | 200mA |
If-forward Current | 120mA |
Vf-Forward Voltage | 720mV |
Operating Temperature-Min | -55℃ |
junction capacitance | 5pF |
Operating Temperature-Max | +150℃ |
Reverse recovery time | 100pS |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Termination type | 贴片 |
Reverse Leakage Current | 1uA |
Pd-Power Dissipation | 250mW |
Configuration | 独立式 |
Temperature Coefficient | 肖特基 |
Others include "BAS40E6327HTSA1" parts
The following parts include 'BAS40E6327HTSA1'
BAS40E6327HTSA1 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
IRFS4115TRLPBF
Infineon
N沟道,150V,99A,12.1mΩ@10V
Learn More >
-
-
-
-
IRFR5305TRPBF
Infineon
Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
2EDF7275K
Infineon
Learn More >
-
-
-
-
IRF4905PBF
Infineon
Trans MOSFET P-CH Si 55V 74A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
-
IRF640NPBF
Infineon
N沟道,200V,18A,150mΩ@10V
Learn More >
-
-
-
-
BSC050N04LSGATMA1
Infineon
Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP T/R
Learn More >
-
-
-
-
IRF7205TRPBF
Infineon
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R
Learn More >
-
-
-
-
BAT1704E6327HTSA1
Infineon
RF Diode Schottky 4V 150mW 3-Pin SOT-23 T/R
Learn More >
-
-
-
-
ILD8150E
Infineon
Learn More >
-
-
-
-
S25FL256SAGMFI001
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 14.5ns 16-Pin SOIC W Tube
Learn More >
-
-
View All Newest Products from Omron