IGB30N60H3ATMA1
In stock
- IGB30N60H3ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Package | TO-263-3 |
Pd-Power Dissipation | 187W |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
VGS | 18ns/207ns |
VDS | 600V |
Transistor polarity | 沟槽型场截止 |
Operating Temperature Range | -40°C~175°C(TJ) |
Termination type | 表面贴装型 |
Others include "IGB30N60H3ATMA1" parts
The following parts include 'IGB30N60H3ATMA1'
IGB30N60H3ATMA1 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
SPD18P06P G
Infineon
MOSFET P-Ch -60V -18.6A DPAK-2
Learn More >
-
-
IAUC60N04S6L039ATMA1
Infineon
MOSFET MOSFET_(20V 40V)
Learn More >
-
-
TLE4998P3XALA1
Infineon
Hall Effect Sensor 5mA 5V Automotive AEC-Q100 3-Pin SSO Ammo
Learn More >
-
-
IRF100B202
Infineon
N沟道 100V 97A
Learn More >
-
-
IPD031N06L3G
Infineon
Learn More >
-
-
IKY100N120CH7XKSA1
Infineon
-
Learn More >
-
-
IPD031N06L3G
Infineon
Learn More >
-
-
IM68A130V01XTMA1
Infineon
-
Learn More >
-
-
AUIRF3205Z
Infineon
Trans MOSFET N-CH Si 55V 110A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
TLD5098EPXUMA1
Infineon
Boost LED driver with short circuit protection circuitry Automotive AEC-Q100
Learn More >
- View All Newest Products from Omron