IPB015N08N5ATMA1

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Specification
Rds On | 1.8 mOhms |
Pd-Power Dissipation | 375 W |
Continuous drain current | 180 A |
Termination type | SMD/SMT |
VDS | 80 V |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
Circuit Branch Number | 1 Channel |
Qg | 178 nC |
Height | 4.4 mm |
VGS | 20 V |
Length | 10 mm |
Width | 9.25 mm |
Package | TO-263-7 |
Operating Temperature Range | - 55 C~+ 175 C |
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