IPB027N10N3 G

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Specification
Package | TO-263-3 |
Continuous drain current | 120 A |
Pd-Power Dissipation | 300 W |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | yes |
Transistor polarity | MOSFET |
VDS | 100 V |
Rds On | 2.3 mOhms |
VGS | 20 V |
Circuit Branch Number | 1 Channel |
Qg | 206 nC |
Operating Temperature Range | - 55 C~+ 175 C |
Termination type | SMD/SMT |
Length | 10 mm |
Width | 9.25 mm |
Height | 4.4 mm |
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