IPB80N03S4L03ATMA1

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Specification
Termination type | SMD/SMT |
Rds On | 2 mOhms |
Pd-Power Dissipation | 136 W |
Qualification level | AEC-Q101 |
VDS | 30 V |
Continuous drain current | 80 A |
工厂最小包装 | 7000 |
寿命周期 | 最后购买阶段 |
ROHS | no |
Qg | 140 nC |
Circuit Branch Number | 1 Channel |
Package | PG-TO263-3-2 |
VGS | 16 V |
Height | 4.4 mm |
Length | 10 mm |
Operating Temperature Range | - 55 C~+ 175 C |
Transistor polarity | MOSFET |
Width | 9.25 mm |
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