SI4435DYTRPBF

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Specification
Pd-Power Dissipation | 2.5 W |
Package | SOIC-8 |
Continuous drain current | 8 A |
工厂最小包装 | 4000 |
寿命周期 | 量产 |
ROHS | no |
VGS | 20 V |
Length | 4.9 mm |
Width | 3.9 mm |
Circuit Branch Number | 1 Channel |
Transistor polarity | HEXFET Power MOSFET |
Qg | 40 nC |
Height | 1.75 mm |
VDS | 30 V |
Operating Temperature Range | - 55 C~+ 150 C |
Termination type | SMD/SMT |
Rds On | 35 mOhms |
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