TC58BYG0S3HBAI6

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Specification
Memory Type | NAND |
Interface Type | Parallel |
Storage Capacity | 1 Gbit |
Operating Supply Voltage | 1.7 V~1.95 V |
Termination type | SMD/SMT |
工厂最小包装 | 338 |
寿命周期 | 量产 |
ROHS | yes |
Operating Temperature Range | - 40 C~+ 85 C |
Package | VFBGA-67 |
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TC58BYG0S3HBAI6 Releted Information
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