TH58NYG2S3HBAI4

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Specification
Operating Supply Voltage | 1.7 V~1.95 V |
Termination type | SMD/SMT |
Storage Capacity | 4 Gbit |
Memory Type | NAND |
Interface Type | Parallel |
工厂最小包装 | 210 |
寿命周期 | 量产 |
ROHS | yes |
Package | TFBGA-63 |
Rate | 25 ns |
Operating Temperature Range | - 40 C~+ 85 C |
TH58NYG2S3HBAI4 Releted Information
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