S-L2N7002SLT1G
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S-LN2292LT1G
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LP2301ELT1G
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Device:LP2301ELT1G Device Marking:YES Qualified to AECQ101: DATA SHEET: VDSS (V):20 VGS(V):8 ID (A) @TA:2.8 ID (A) @TC: VGSth Min (V):0.4 VGSth Max (V):0.9 td(on) (ns):1350 td(off) (ns):5550 RDS（ON）Max @VGS/IDS (m?):110 VGS/IDS (V)/(A):4.5/2.8 Package:SOT-23 Polarity:P-Channel(with ESD)
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LRB521S-30T1G
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30V,0.2A,VF=0.5V@0.2A LRB521S-30T1G
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LESD11D12CT5G
LRC
Device:LESD11D12CT5G Device Marking: Qualified to AECQ101: DATA SHEET: VRWM (V):12 IR @VRWM (μA):1 VBR (V) Min:13.3 CJ (pF):6.5 VC @IPP (V):24 IPP tp=8/20μs (A):4 Power tp=8/20μs (WATT):95 Package:DFN0603
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SZA15A
LRC
Device:SZA15A Device Marking: Z15A Qualified to AECQ101: DATA SHEET: VZ (V) Min:14.25 VZ (V) Nom:15 VZ (V) Max:15.75 Vz@IZT mA:17 PD(mW):1000 Package:SMA
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LBC857BLT1G
LRC
PNP Vceo=-50V Ic=-100mA,hfe=200~475(Ic=-2mA，Vce=-5V)
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S-L1SS400T1G
LRC
二极管
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LESD8D3.3CBT5G
LRC
Device:LESD8D3.3CBT5G Device Marking:DA Qualified to AECQ101: DATA SHEET: VRWM (V):3.3 IR @VRWM (μA):0.05 VBR (V) Min:5 CJ (pF):20 VC @IPP (V):9 IPP tp=8/20μs (A):10 Power tp=8/20μs (WATT):105 Package:SOD-882
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LMUN5335DW1T1G
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预偏置,NPN+PNP,Vceo=40V,Ic=100mA
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LR1117DS33X
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SOT-223
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