MCR12DSN-1G

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Specification
Gate trigger voltage | 1V |
Package | TO-251-3 |
工厂最小包装 | 75 |
寿命周期 | 量产 |
ROHS | no |
On-state rms current | 12 A |
Holding Current | 6mA |
Height | 6.35 mm |
Length | 6.73 mm |
Width | 2.38 mm |
Gate trigger current | 0.2 mA |
Maximum Breakover Current IBO | 100 A |
Max. gate threshold reverse voltage | 18 V |
Off-state voltage (Vdrm) | 800 V |
Operating Temperature Range | - 40 C~+ 110 C |
Transistor type | SCRs |
Termination type | Through Hole |
Others include "MCR12DSN-1G" parts
The following parts include 'MCR12DSN-1G'
MCR12DSN-1G Releted Information
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