S4X8ES

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Specification
Gate trigger voltage | 800mV |
Package | TO-92-3 |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Holding Current | 5mA |
On-state rms current | 800 mA |
Maximum Breakover Current IBO | 10 A |
Max. gate threshold reverse voltage | 5 V |
Gate trigger current | 200 uA |
Height | 5.33 mm |
Off-state voltage (Vdrm) | 400 V |
Operating Temperature Range | - 40 C~+ 125 C |
Length | 5.2 mm |
Width | 4.19 mm |
Transistor type | SCRs |
Termination type | Through Hole |
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