FQB4N80TM

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Specification
Package | TO-263-3 |
Pd-Power Dissipation | 3.13 W |
Continuous drain current | 3.9 A |
工厂最小包装 | 800 |
寿命周期 | 量产 |
ROHS | no |
Width | 9.65 mm |
Transistor polarity | MOSFET |
Height | 4.83 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
VDS | 800 V |
Length | 10.67 mm |
Rds On | 3.6 Ohms |
Circuit Branch Number | 1 Channel |
Termination type | SMD/SMT |
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