FQI4N80TU

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Specification
Pd-Power Dissipation | 3.13 W |
Continuous drain current | 3.9 A |
VDS | 800 V |
Termination type | Through Hole |
Rds On | 2.8 Ohms |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
Package | TO-262-3 |
Length | 10.29 mm |
Width | 4.83 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
Height | 7.88 mm |
Circuit Branch Number | 1 Channel |
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