RQ3E120ATTB

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Specification
Package | HSMT-8 |
Pd-Power Dissipation | 2 W |
Continuous drain current | 12 A |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Termination type | SMD/SMT |
VDS | 39 V |
Circuit Branch Number | 1 Channel |
Operating Temperature Range | 150°C(TJ) |
Transistor polarity | MOSFET |
Qg | 62 nC |
Height | 0.85 mm |
Length | 3 mm |
Width | 2.4 mm |
Rds On | 61 mOhms |
VGS | 20 V |
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