RQ3E150BNTB
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Specification
Pd-Power Dissipation | 18 W |
Rds On | 3.8 mOhms |
Termination type | SMD/SMT |
Continuous drain current | 22 A |
VDS | 30 V |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Transistor polarity | MOSFET |
VGS | 20 V |
Operating Temperature Range | - 55 C~+ 150 C |
Package | HSMT-8 |
Qg | 45 nC |
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