RQ3G100GNTB

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Specification
Rds On | 11 mOhms |
VDS | 40 V |
Pd-Power Dissipation | 2 W |
Continuous drain current | 10 A |
Termination type | SMD/SMT |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Package | HSMT-8 |
VGS | 20 V |
Operating Temperature Range | - 55 C~+ 150 C |
Transistor polarity | MOSFET |
Qg | 8.4 nC |
Circuit Branch Number | 1 Channel |
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