SI4178DY-T1-GE3
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Specification
Rds On | 21 mOhms |
Termination type | SMD/SMT |
Continuous drain current | 12 A |
VDS | 30 V |
Pd-Power Dissipation | 5 W |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Package | SOIC-8 |
Height | 1.75 mm |
Width | 3.9 mm |
VGS | 10 V |
Transistor polarity | MOSFET |
Length | 4.9 mm |
Qg | 7.5 nC |
Operating Temperature Range | - 55 C~+ 150 C |
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