SI4477DY-T1-GE3
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Specification
Package | SOIC-8 |
Continuous drain current | 26.6 A |
Pd-Power Dissipation | 6.6 W |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
VGS | 4.5 V |
Rds On | 6.2 mOhms |
Operating Temperature Range | - 55 C~+ 150 C |
Termination type | SMD/SMT |
Qg | 125 nC |
Height | 1.75 mm |
Length | 4.9 mm |
Width | 3.9 mm |
Circuit Branch Number | 1 Channel |
Transistor polarity | MOSFET |
VDS | 20 V |
SI4477DY-T1-GE3 Releted Information
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