SI4909DY-T1-GE3

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Specification
Pd-Power Dissipation | 3.2 W |
Continuous drain current | 8 A |
Package | SO-8 |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Operating Temperature Range | - 55 C~+ 150 C |
Transistor polarity | MOSFET |
Circuit Branch Number | 2 Channel |
VDS | 40 V |
Rds On | 27 mOhms |
Qg | 63 nC |
Termination type | SMD/SMT |
VGS | 20 V |
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