SI5419DU-T1-GE3

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Specification
Pd-Power Dissipation | 3.1W(Ta),31W(Tc) |
Package | ChipFET-8 |
Continuous drain current | 12A(Tc) |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Termination type | SMD/SMT |
Length | 3 mm |
Width | 1.8 mm |
VGS | 2.5V @ 250uA |
Transistor polarity | MOSFET |
Height | 0.75 mm |
Operating Temperature Range | -55°C~150°C(TJ) |
Rds On | 20mΩ @ 6.6A,10V |
VDS | 30V |
SI5419DU-T1-GE3 Releted Information
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