SI9933CDY-T1-GE3

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Specification
Package | SOIC-8 |
Continuous drain current | 4 A |
Pd-Power Dissipation | 3.1 W |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 2 Channel |
VGS | 4.5 V |
Transistor polarity | MOSFET |
Qg | 17 nC |
Height | 1.75 mm |
Rds On | 58 mOhms |
Termination type | SMD/SMT |
VDS | 20 V |
Length | 4.9 mm |
Width | 3.9 mm |
Operating Temperature Range | - 50 C~+ 150 C |
SI9933CDY-T1-GE3 Releted Information
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