SIA430DJT-T1-GE3

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Specification
VDS | 20V |
Termination type | SMD/SMT |
Pd-Power Dissipation | 19.2W(Tc) |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Width | 2.05 mm |
Package | PowerPAK-SC70-6 |
Transistor polarity | MOSFET |
Operating Temperature Range | -55°C~150°C(TJ) |
Height | 0.75 mm |
Length | 2.05 mm |
SIA430DJT-T1-GE3 Releted Information
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