SIA445EDJT-T1-GE3
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Specification
Continuous drain current | 12 A |
Pd-Power Dissipation | 19 W |
VDS | 20 V |
Termination type | SMD/SMT |
Rds On | 13.8 mOhms |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Package | PowerPAK-SC70-6 |
Transistor polarity | MOSFET |
Qg | 69 nC |
Height | 0.75 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Length | 2.05 mm |
VGS | 12 V |
Width | 2.05 mm |
Circuit Branch Number | 1 Channel |
SIA445EDJT-T1-GE3 Releted Information
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