Pictures for reference only, please check the datasheet
SIHB12N60E-GE3
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Specification
| Continuous drain current | 12 A |
| VDS | 650 V |
| Termination type | SMD/SMT |
| Rds On | 380 mOhms |
| Pd-Power Dissipation | 147 W |
| 工厂最小包装 | 1000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Transistor polarity | MOSFET |
| Package | TO-263-3 |
| Circuit Branch Number | 1 Channel |
| Operating Temperature Range | - 55 C~+ 150 C |
| VGS | 30 V |
| Qg | 29 nC |
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