SIHB33N60E-GE3

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Specification
Pd-Power Dissipation | 278 W |
Package | TO-263-3 |
Continuous drain current | 33 A |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Termination type | SMD/SMT |
Circuit Branch Number | 1 Channel |
VGS | 30 V |
Rds On | 99 mOhms |
Operating Temperature Range | - 55 C~+ 150 C |
VDS | 600 V |
Transistor polarity | MOSFET |
Length | 10.67 mm |
Width | 9.65 mm |
Qg | 100 nC |
Height | 4.83 mm |
SIHB33N60E-GE3 Releted Information
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