SIHG20N50C-E3

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Specification
Continuous drain current | 20 A |
Pd-Power Dissipation | 250 mW |
Package | TO-247-3 |
工厂最小包装 | 500 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
VDS | 500 V |
Operating Temperature Range | - 55 C~+ 150 C |
Circuit Branch Number | 1 Channel |
Termination type | Through Hole |
Qg | 65 nC |
Height | 20.82 mm |
VGS | 10 V |
Rds On | 270 mOhms |
Length | 15.87 mm |
Width | 5.31 mm |
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The following parts include 'SIHG20N50C-E3'
SIHG20N50C-E3 Releted Information
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