SIHG20N50E-GE3

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Specification
Pd-Power Dissipation | 179 W |
Termination type | Through Hole |
Rds On | 184 mOhms |
Continuous drain current | 19 A |
VDS | 500 V |
工厂最小包装 | 500 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
VGS | 30 V |
Package | TO-247AC-3 |
Operating Temperature Range | - 55 C~+ 150 C |
Transistor polarity | MOSFET |
Qg | 46 nC |
Height | 20.82 mm |
Length | 15.87 mm |
Width | 5.31 mm |
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