SIHG40N60E-GE3

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Specification
Pd-Power Dissipation | 329 W |
VDS | 600 V |
Continuous drain current | 40 A |
Termination type | Through Hole |
Rds On | 65 mOhms |
工厂最小包装 | 500 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
Package | TO-247AC-3 |
Circuit Branch Number | 1 Channel |
Operating Temperature Range | - 55 C~+ 150 C |
Qg | 131 nC |
VGS | 30 V |
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