SIHJ7N65E-T1-GE3

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Specification
Rds On | 520 mOhms |
Pd-Power Dissipation | 96 W |
Termination type | SMD/SMT |
VDS | 650 V |
Continuous drain current | 7.9 A |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Qg | 22 nC |
Height | 1.04 mm |
Package | PowerPAK-SO-8L-4 |
Circuit Branch Number | 1 Channel |
Width | 5.13 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Transistor polarity | MOSFET |
Length | 6.15 mm |
VGS | 30 V |
SIHJ7N65E-T1-GE3 Releted Information
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