SIHP8N50D-GE3

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Specification
VDS | 500 V |
Continuous drain current | 8.7 A |
Rds On | 850 mOhms |
Termination type | Through Hole |
Pd-Power Dissipation | 156 W |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Transistor polarity | MOSFET |
Package | TO-220AB-3 |
Qg | 15 nC |
Height | 15.49 mm |
Length | 10.41 mm |
Width | 4.7 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
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