SIHU6N62E-GE3
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Specification
VDS | 620 V |
Pd-Power Dissipation | 78 W |
Continuous drain current | 6 A |
Rds On | 900 mOhms |
Termination type | Through Hole |
工厂最小包装 | 75 |
寿命周期 | 量产 |
ROHS | no |
Length | 6.73 mm |
Height | 6.22 mm |
Package | IPAK(TO-251) |
Transistor polarity | MOSFET |
Qg | 17 nC |
Width | 2.39 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
Circuit Branch Number | 1 Channel |
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