SQS966ENW-T1_GE3

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Specification
Continuous drain current | 6 A |
Rds On | 36 mOhms |
VDS | 60 V |
Termination type | SMD/SMT |
Pd-Power Dissipation | 27.8 W |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Operating Temperature Range | - 55 C~+ 175 C |
Qg | 6.2 nC |
Circuit Branch Number | 2 Channel |
VGS | 10 V |
Package | PowerPAK-1212-8 |
Transistor polarity | MOSFET |
SQS966ENW-T1_GE3 Releted Information
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